M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0923 - Superseded At the same time

At the same time

SEMI P38 — Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks

This Document does not describe measurement procedures

SEMI M84-0414 (first published)

This specification provides the necessary information for ordering and specifying such substrates

M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0923 - Superseded At the same timeBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device